3 edition of Diffusion length measurements in bulk and epitaxially grown III-V semiconductors using charge collection microscopy found in the catalog.
Diffusion length measurements in bulk and epitaxially grown III-V semiconductors using charge collection microscopy
1987 by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English
|Series||NASA technical memorandum -- 100128.|
|Contributions||United States. National Aeronautics and Space Administration.|
|The Physical Object|
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