3 edition of Diffusion length measurements in bulk and epitaxially grown III-V semiconductors using charge collection microscopy found in the catalog.
Diffusion length measurements in bulk and epitaxially grown III-V semiconductors using charge collection microscopy
Published
1987 by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English
Edition Notes
| Statement | R.P. Leon. |
| Series | NASA technical memorandum -- 100128. |
| Contributions | United States. National Aeronautics and Space Administration. |
| The Physical Object | |
|---|---|
| Format | Microform |
| Pagination | 1 v. |
| ID Numbers | |
| Open Library | OL15289283M |
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